JPS6128231B2 - - Google Patents
Info
- Publication number
- JPS6128231B2 JPS6128231B2 JP9839777A JP9839777A JPS6128231B2 JP S6128231 B2 JPS6128231 B2 JP S6128231B2 JP 9839777 A JP9839777 A JP 9839777A JP 9839777 A JP9839777 A JP 9839777A JP S6128231 B2 JPS6128231 B2 JP S6128231B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon dioxide
- polycrystalline silicon
- region
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 62
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 32
- 235000012239 silicon dioxide Nutrition 0.000 claims description 31
- 239000000377 silicon dioxide Substances 0.000 claims description 31
- 238000009792 diffusion process Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 239000012535 impurity Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 230000005669 field effect Effects 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229960000583 acetic acid Drugs 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012362 glacial acetic acid Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9839777A JPS5432078A (en) | 1977-08-16 | 1977-08-16 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9839777A JPS5432078A (en) | 1977-08-16 | 1977-08-16 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5432078A JPS5432078A (en) | 1979-03-09 |
| JPS6128231B2 true JPS6128231B2 (en]) | 1986-06-28 |
Family
ID=14218693
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9839777A Granted JPS5432078A (en) | 1977-08-16 | 1977-08-16 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5432078A (en]) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5612773A (en) * | 1979-07-12 | 1981-02-07 | Seiko Epson Corp | Silicon gate mos field-effect transistor |
| JPS615766A (ja) * | 1984-06-18 | 1986-01-11 | Aoyama Kazuko | 醸造飲料水の製造法 |
| JPS6147178A (ja) * | 1984-08-09 | 1986-03-07 | Takara Shuzo Co Ltd | 豆乳入りアルコ−ル飲料 |
-
1977
- 1977-08-16 JP JP9839777A patent/JPS5432078A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5432078A (en) | 1979-03-09 |
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